| Silicon (Si) CCD/CMOS | Approximately 0.4–1.0 or 1.1 µm | About 1.0–1.1 µm | Usually uncooled | High resolution, mature manufacturing, low cost, and strong performance in visible light | Machine vision, imaging, documentation, visible and near-infrared inspection | Limited sensitivity beyond approximately 1.1 µm; unsuitable for most SWIR measurements |
| InGaAs SWIR | Approximately 0.9–1.7 µm | 1.7 µm cutoff | Usually uncooled; thermoelectric cooling may be used for lower noise | High sensitivity in the 0.9–1.7 µm range, low dark current compared with many longer-wave materials, and good response to transmission through silicon and certain polymers | Semiconductor inspection, solar-cell inspection, fiber-optic testing, moisture analysis, sorting, surveillance, and low-light imaging | Higher cost than silicon; sensitivity ends near 1.7 µm, so it cannot cover much of the mid-wave infrared band |
| Extended InGaAs SWIR | Approximately 0.9–2.2 or 2.6 µm, depending on material design | Typically 2.2–2.6 µm | Often uncooled, with cooling used when lower noise is required | Broader SWIR coverage than standard 1.7 µm InGaAs; useful for additional water, hydrocarbon, and material absorption features | Advanced chemical inspection, mineral analysis, food sorting, plastics inspection, and extended-SWIR spectroscopy | Generally higher dark current and lower sensitivity than standard InGaAs; longer cutoffs can reduce room-temperature performance |
| Germanium (Ge) | Approximately 0.8–1.8 µm | About 1.8 µm | Often cooled for low-noise measurements | Broad near-infrared response and compatibility with some optical measurement systems | Near-infrared spectroscopy, optical communications, and scientific instrumentation | Higher dark current and weaker room-temperature imaging performance than typical InGaAs devices |
| Indium Antimonide (InSb) | Approximately 1–5.5 µm | About 5.5 µm | Typically cryogenically cooled | Very high sensitivity and fast response in the mid-wave infrared band | Thermal imaging, gas analysis, spectroscopy, and high-speed infrared measurements | Cooling, power, cost, and integration complexity; less convenient for compact uncooled systems |
| Mercury Cadmium Telluride (MCT/HgCdTe) | Material-dependent; commonly from approximately 1–14 µm | Composition-selected cutoff from near-IR through long-wave IR | Frequently cooled, although some versions are designed for higher-temperature operation | Broad wavelength flexibility, high detectivity, and strong performance across SWIR, MWIR, and LWIR designs | Scientific cameras, spectroscopy, military imaging, astronomy, and high-performance thermal imaging | Complex fabrication, higher cost, calibration requirements, and possible cooling requirements |
| PbS / PbSe Photoconductive | PbS: approximately 1–3 µm; PbSe: approximately 1–5 µm | Material- and detector-design-dependent | Often thermoelectrically cooled or temperature stabilized | Useful broadband response and suitability for selected spectroscopy and industrial measurement tasks | Flame detection, process monitoring, spectroscopy, and optical measurement | Typically lower imaging performance and greater temperature dependence than modern focal-plane-array technologies |
| Uncooled Microbolometer | Commonly 8–14 µm for long-wave infrared models; other bands are available | Detector-specific, commonly centered on the LWIR atmospheric window | Uncooled | Compact, low power, mechanically robust, and suitable for real-time thermal imaging | Building inspection, predictive maintenance, fire detection, automotive systems, and security cameras | Measures emitted thermal radiation rather than reflected SWIR light; generally lower sensitivity and slower response than cooled photon detectors |